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| (R) STX817 PNP MEDIUM POWER TRANSISTOR Type STX817 Marking X817 s DEVICE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY APPLICATIONS VOLTAGE REGULATION s RELAY DRIVER s GENERIC SWITCH s TO-92 DECRIPTION The STX817 is a PNP transistor manufactured using Planar Technology resulting in rugged high performance devices. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 C Storage Temperature Max. Operating Junction Temperature o Value -120 -80 -5 -1.5 -2 -0.3 -0.6 0.9 -65 to 150 150 Unit V V V A A A A W o o C C April 2002 1/4 STX817 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 44.6 139 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = -120 V V CE = -80 V V EB = -5 V I C = -10 mA -80 Min. Typ. Max. -500 -1 -100 Unit A mA A V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = -100 mA I C = -1 A I C = -100 mA I C = -1 A I C = -100 mA I C = -500 mA I C = -1 A I C = -0.1 A I B = -10 mA I B = -100 mA I B = -10 mA I B = -100 mA V CE = -2 V V CE = -2 V V CE = -2 V V CE = -10 V 140 80 40 50 -0.25 -0.5 -1 -1.1 V V V V fT Transition Frequency MHz Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 STX817 TO-92 MECHANICAL DATA mm MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 1.14 0.41 4 degree TYP. MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 6 degree MIN. 0.170 0.014 0.175 0.130 0.095 0.045 0.500 0.085 0.045 0.016 4 degree inch TYP. MAX. 0.195 0.020 0.194 0.155 0.105 0.055 0.609 0.094 0.059 0.022 6 degree DIM. 3/4 STX817 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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